IndiumV3, Chine, Analysis, bibRecord, 000F89

Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems

Identifieur interne : 000F89 ( Chine/Analysis ); précédent : 000F88; suivant : 000F90

Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems

Auteurs : RBID : Pascal:08-0316322

Descripteurs français

Pascal (Inist)
- Couleur, Spectre absorption, Spectre IR, Bande interdite, Sous bande, Fonction onde, Interface, Transition interbande, Système quantique, Arséniure d'indium, Antimoniure de gallium, Puits quantique, Hétérostructure, InAs, GaSb, GaP, 8107S.

English descriptors

KwdEn :
- Absorption spectra, Color, Energy gap, Gallium antimonides, Heterostructures, Indium arsenides, Infrared spectra, Interband transitions, Interfaces, Quantum system, Quantum wells, Subband, Wave functions.

Abstract

We examine theoretically the contribution from different transition channels to optical absorption in an InAs/GaSb-based type II and broken-gap quantum well in which both electron and hole subbands in different layers are occupied by carriers. We find that in such a system, due to a weak overlap of the electron and hole wavefunction at the interface, optical absorption is mainly achieved via intersubband transition within the same material layer. As a result, two sharp absorption peaks can be observed and the intensity of this two-colour absorption depends rather weakly on temperature up to room-temperature.

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Pascal:08-0316322

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems</title>
<author><name sortKey="Wei, X F" uniqKey="Wei X">X. F. Wei</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences</s1>
<s2>Hefei 230031</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Hefei 230031</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Xu, W" uniqKey="Xu W">W. Xu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences</s1>
<s2>Hefei 230031</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Hefei 230031</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Theoretical Physics, RSPhysSE, Australian National University</s1>
<s2>Canberra, ACT 0200</s2>
<s3>AUS</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Canberra, ACT 0200</wicri:noRegion>
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</author>
<author><name sortKey="Zhang, J" uniqKey="Zhang J">J. Zhang</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Yunnan University</s1>
<s2>Kunming 650091</s2>
<s3>CHN</s3>
<sZ>3 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Kunming 650091</wicri:noRegion>
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<author><name sortKey="Zeng, Z" uniqKey="Zeng Z">Z. Zeng</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences</s1>
<s2>Hefei 230031</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Hefei 230031</wicri:noRegion>
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<author><name sortKey="Zhang, C" uniqKey="Zhang C">C. Zhang</name>
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<seriesStmt><idno type="ISSN">1386-9477</idno>
<title level="j" type="abbreviated">Physica ( E) low-dimens.  syst.  nanostrut.</title>
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<term>Color</term>
<term>Energy gap</term>
<term>Gallium antimonides</term>
<term>Heterostructures</term>
<term>Indium arsenides</term>
<term>Infrared spectra</term>
<term>Interband transitions</term>
<term>Interfaces</term>
<term>Quantum system</term>
<term>Quantum wells</term>
<term>Subband</term>
<term>Wave functions</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Couleur</term>
<term>Spectre absorption</term>
<term>Spectre IR</term>
<term>Bande interdite</term>
<term>Sous bande</term>
<term>Fonction onde</term>
<term>Interface</term>
<term>Transition interbande</term>
<term>Système quantique</term>
<term>Arséniure d'indium</term>
<term>Antimoniure de gallium</term>
<term>Puits quantique</term>
<term>Hétérostructure</term>
<term>InAs</term>
<term>GaSb</term>
<term>GaP</term>
<term>8107S</term>
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<front><div type="abstract" xml:lang="en">We examine theoretically the contribution from different transition channels to optical absorption in an InAs/GaSb-based type II and broken-gap quantum well in which both electron and hole subbands in different layers are occupied by carriers. We find that in such a system, due to a weak overlap of the electron and hole wavefunction at the interface, optical absorption is mainly achieved via intersubband transition within the same material layer. As a result, two sharp absorption peaks can be observed and the intensity of this two-colour absorption depends rather weakly on temperature up to room-temperature.</div>
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   |texte=   Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems
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Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems

Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri